Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm

Code: 647675-5EA D2-231

Application

﹤100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

Packaging

1 set in padded ...


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€526.65 PK5
€647.78 inc. VAT
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Application

﹤100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

Packaging

1 set in padded box

1EA refers to 1 wafer and 5EA refers to 5 wafers

5 ea in rigid mailer

Physical properties

Oxygen content: ﹤= 1~1.8 x 1018 /cm3; Carbon content: ﹤= 5 x 1016 /cm3; Boule diameter: 1~8 ″

0 vortex defects. Etch pitch density (EPD) ﹤ 100 (cm-2). Resistivity 10-3 - 40 Ω cm

bp2355 °C (lit.)
containsboron as dopant
density2.33 g/mL at 25 °C (lit.)
diam. × thickness2 in. × 0.5 mm
formwafer (single side polished), crystalline (cubic (a = 5.4037))
InChI keyXUIMIQQOPSSXEZ-UHFFFAOYSA-N
InChI1S/Si
mp1410 °C (lit.)
Quality Level100
semiconductor properties﹤100﹥, P-type
SMILES string[Si]
Cas Number7440-21-3
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