Silicon carbide, -400 mesh particle size, >=97.5%

Code: 357391-250G D2-231

Application

SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices (light emitting diodes (LEDs), UV detectors), high tempe...


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Your Price
€47.00 250G
€57.81 inc. VAT

Application

SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices (light emitting diodes (LEDs), UV detectors), high temperature electronics (nuclear electronics), and high frequency devices.

General description

Silicon carbide (SiC) is a semiconducting material with closed packed stacking of double layers of silicon and carbon. It has excellent thermo-mechanical and electrical properties that make it useful in a variety of electronic and optoelectronic applications.

Packaging

250 g in poly bottle

1 kg in poly bottle

assay≥97.5%
density3.22 g/mL at 25 °C (lit.)
descriptionhexagonal phase
formpowder
InChI keyHBMJWWWQQXIZIP-UHFFFAOYSA-N
InChI1S/CSi/c1-2
mp2700 °C (lit.)
particle size−400 mesh
Quality Level100
SMILES string[C-]#[Si+]
Cas Number409-21-2
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